N-Channel PowerTrench® MOSFET 30V

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Overview

This devices utilizes two optimized N-ch FETs in a dual 3.3x5mm thermally enhanced power package. The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM.

  • This product is general usage and suitable for many different applications.
  • Q1: N-Channel
    Max rDS(on) = 4 mΩ at VGS = 10 V, ID = 19 A
    Max rDS(on) = 5 mΩ at VGS = 4.5 V, ID = 17 A
    Max rDS(on) = 6.5 mΩ at VGS = 3.8 V, ID = 15 A
    Max rDS(on) = 8.3 mΩ at VGS = 3.5 V, ID = 14 A
  • Q2: N-Channel
    Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17 A
    Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
    Max rDS(on) = 9 mΩ at VGS = 3.8 V, ID = 13 A
    Max rDS(on) = 12 mΩ at VGS = 3.5 V, ID = 12 A
  • Ideal for Flexible Layout in Primary Side of Bridge Topology
  • Termination is Lead-free and RoHS Compliant
  • 100% UIL Tested
  • Kelvin High Side MOSFET Drive Pin-out Capability

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMD8900

Last Shipments

Pb

A

H

P

PQFN-12

1

260

REEL

3000

N

N-Channel

Dual

30

12

2.5

Q1:66.0, Q2: 42.0

Q1: 27, Q2: 15

-

Q1: 5, Q2: 6.5

Q1: 4, Q2: 5.5

-

8.8

1210

Price N/A

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