Dual N-Channel PowerTrench® MOSFET 80V, 82A, 4.6mΩ

Favorite

Overview

This device includes two 80V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on) / Qg FOM silicon.

  • This product is general usage and suitable for many different applications.
  • Q1: N-Channel
    Max rDS(on) = 4.6 mΩ at VGS = 10 V, ID = 16 A
    Max rDS(on) = 6.0 mΩ at VGS = 8 V, ID = 14 A
  • Q2: N-Channel
    Max rDS(on) = 4.6 mΩ at VGS = 10 V, ID = 16 A
    Max rDS(on) = 6.0 mΩ at VGS = 8 V, ID = 14 A
  • Ideal for Flexible Layout in Primary Side of Bridge Topology
  • 100% UIL Tested
  • Kelvin High Side MOSFET Drive Pin-out Capability
  • RoHS Compliant

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMD8580

Loading...

Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

80

6

N-Channel

Dual

±20

4.5

Q1=Q2= 82.0

59

-

6

-

57

Q1=Q2=4195

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :