MOSFETs | FDMD8540L

Dual N-Channel PowerTrench® MOSFET 40V, 156A, 1.5mΩ

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Overview

This device includes two 40V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

  • This product is general usage and suitable for many different applications.
  • Q1: N-Channel
    Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A
    Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 26 A
  • Q2: N-Channel
    Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A
    Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 26 A
  • Ideal for Flexible Layout in Primary Side of Bridge Topology
  • 100% UIL Tested
  • Kelvin High Side MOSFET Drive Pin-out Capability
  • RoHS Compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMD8540L

Last Shipments

Pb

A

H

P

PQFN-8

483AT

1

260

REEL

3000

N

N-Channel

Dual

40

±20

3

Q1=Q2=156

62

-

Q1=Q2=2.2

Q1=Q2=1.5

-

38

Q1=Q2=5670

Price N/A

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