Dual N-Channel Power Trench® MOSFET 60V, 5.8mΩ

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Overview

This device includes two 60V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on) / Qg FOM silicon.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 15 A
  • Max rDS(on) = 8.7 mΩ at VGS = 4.5 V, ID = 12 A
  • Ideal for Flexible Layout in Primary Side of Bridge Topology
  • 100% UIL Tested
  • Kelvin High Side MOSFET Drive Pin-out Capability
  • Termination is Lead-free and RoHS Compliant

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Product

Status

ECAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMD8260L

Last Shipments

Pb

A

H

P

PQFN-12

1

260

REEL

3000

N

N-Channel

Dual

60

±20

3

15

37

-

Q1=Q2=8.7

Q1=Q2=5.8

-

25

3745

Price N/A

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