N-Channel PowerTrench® MOSFET 25V, 40A, 5.7mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) , fast switching speed and body diode reverse recovery performance.

  • Energy Generation & Distribution
  • Dual Cool™ 33 PowerTrench® MOSFET
  • Max RDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 17 A
  • State-of-the-art switching performance
  • Lower output capacitance, gate resistance, and gate charge boost efficiency
  • Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC8588DC

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

25

5

N-Channel

Single

12

1.8

40

41

-

5.7

19.4

12

1695

Price N/A

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