N-Channel PowerTrench® MOSFET 25V, 49A, 5.0mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

  • Server
  • Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 16.7 A
  • Max rDS(on) = 7.5 mΩ at VGS = 4.5 V, ID = 13.6 A
  • State-of-the-art switching performance
  • Lower output capacitance, gate resistance, and gate charge boost efficiency
  • Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
  • Clip bonding technology further reduces On resistance and source inductance
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC7582

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

25

5

N-Channel

Single

20

2.5

49

52

-

7.5

24

9.5

1348

Price N/A

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