P-Channel Power Trench® MOSFET -30V, -18A, 20mΩ

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Overview

This P-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 20.0mΩ at VGS = -10V, ID = -8.5A
  • Max rDS(on) = 37.0mΩ at VGS = -4.5V, ID = -6.3A
  • Extended VGSS range (-25V) for battery applications
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • HBM ESD protection level >7kV typical
  • 100% UIL Tested
  • Termination is Lead-free and RoHS Compliant

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3

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC4435BZ

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

-30

20

P-Channel

Single

25

-3

-18

31

-

37

26

17

1540

$0.3633

More Details

FDMC4435BZ-F126

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

N

-30

20

P-Channel

Single

25

-3

-18

31

-

37

26

17

1540

Price N/A

More Details

FDMC4435BZ-F127

Loading...

Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

N

-30

20

P-Channel

Single

25

-3

-18

31

-

37

26

17

1540

$0.4737

More Details

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