N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ

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Overview

UltraFET® device combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A
  • Typ Qg = 12.7nC at VGS = 10V
  • Low Miller charge
  • Low Qrr Body Diode
  • Optimized efficiency at high frequencies
  • UIS Capability ( Single Pulse andRepetitive Pulse)
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC2674

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Lifetime

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

N

220

366

N-Channel

Single

±20

4

7

42

-

-

-

12.7

880

$0.6897

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