N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ

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Overview

UltraFET® device combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A
  • Typ Qg = 12.7nC at VGS = 10V
  • Low Miller charge
  • Low Qrr Body Diode
  • Optimized efficiency at high frequencies
  • UIS Capability ( Single Pulse andRepetitive Pulse)
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMC2674

Active

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

N-Channel

Single

220

±20

4

7

42

-

-

366

-

12.7

880

$0.6568

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