N-Channel PowerTrench® MOSFET 30V, 6.5A, 23mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on) switching performance.

  • Notebook PC
  • Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
  • Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A
  • High performance trench technology for extremely low rDS(on)
  • Fast switching speed
  • RoHS Compliant

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Product

Status

CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMA8884

Last Shipments

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

N-Channel

Single

30

20

3

6.5

1.9

-

30

23

-

2.7

339

Price N/A

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