MOSFETs | FDMA3028N

Dual N-Channel PowerTrench® MOSFET 30V, 3.8A, 68mΩ

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Overview

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

  • Mobile Handsets
  • Portable Devices
  • Max rDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A
  • Max rDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A
  • Max rDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMA3028N

Last Shipments

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

N

N-Channel

Dual

30

12

1.5

3.8

1.5

Q1=Q2=88

Q1=Q2=68

-

20

3.7

282

Price N/A

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