MOSFETs | FDMA3027PZ

Dual P-Channel PowerTrench® MOSFET -30V , -3.3A, 87mΩ

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CAD Model

Overview

This device is designed specifically as a single package solution for dual switching requirements such as gate driver for larger Mosfets. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G-S zener has been added to enhance ESD voltage level.

  • Distribution
  • Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A
  • Max rDS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A
  • HBM ESD protection level > 2 KV typical (Note 3)
  • Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm
  • RoHS Compliant

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FDMA3027PZ

Last Shipments

CAD Model

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

N

P-Channel

Dual

-30

25

-3

-3.3

1.4

-

Q1=Q2=152

Q1=Q2=87

12

4.1

324

Price N/A

More Details

FDMA3027PZ-F130

Last Shipments

CAD Model

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

N

P-Channel

Dual

-30

25

-3

-3.3

1.4

-

Q1=Q2=152

Q1=Q2=87

12

4.1

324

Price N/A

More Details

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