FDG332PZ

P-Channel PowerTrench^® MOSFET -20V, -2.6A, 97mΩ

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CAD Model

Overview

This P-Channel MOSFET usesan advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on) = 95mΩ at V_GS = -4.5V, I_D = -2.6A
Max r_DS(on) = 115mΩ at V_GS = -2.5V, I_D = -2.2A
Max r_DS(on) = 160mΩ at V_GS = -1.8V, I_D = -1.9A
Max r_DS(on) = 330mΩat V_GS = -1.5V, I_D = -1.0A
Very low level gate drive requirements allowing operationin 1.5V circuits
Very small package outline SC70-6
RoHS Compliant

Material Composition

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MSL Type

MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDG332PZ

Last Shipments

SC-88-6 / SC-70-6 / SOT-363-6

419AD

260

REEL

3000

P-Channel

Single

-20

-1.5

-2.6

0.75

115

1.8

7.6

420

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDG332PZ

P-Channel PowerTrench® MOSFET -20V, -2.6A, 97mΩ

Overview

Availability & Samples (size)

Email Sales

P-Channel PowerTrench^® MOSFET -20V, -2.6A, 97mΩ