FDG330P

P-Channel 1.8V Specified PowerTrench^® MOSFET -12 V, -2 A, 110 mΩ

Overview

This P-Channel 1.8V specified MOSFET uses ON Semiconductor’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Applications

This product is general usage and suitable for many different applications.

Features

-2A, -12V
R_DS(ON) = 110mΩ @ V_GS = -4.5V
R_DS(ON) = 150mΩ @ V_GS = -2.5V
R_DS(ON) = 215mΩ @ V_GS = -1.8V
Low gate charge
High performance trench technology for extremely low R_DS(ON)
Compact industry standard SC70-6 surface mount package

Material Composition

Product Change Notification

Product List

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDG330P

Obsolete

SC-88-6 / SC-70-6 / SOT-363-6

419AD

260

REEL

3000

-12

P-Channel

Single

-1.5

-2

0.75

150

110

5.1

477

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDG330P

P-Channel 1.8V Specified PowerTrench® MOSFET -12 V, -2 A, 110 mΩ

Overview

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P-Channel 1.8V Specified PowerTrench^® MOSFET -12 V, -2 A, 110 mΩ