FDG313N

N-Channel Digital FET 25V, 0.95A, 0.45Ω

Overview

This N-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.

Applications

This product is general usage and suitable for many different applications.

Features

0.95 A, 25 V. R_DS(on) = 0.45 Ω @ V_GS = 4.5 V. R_DS(on) = 0.60 Ω @ V_GS = 2.7 V.
Low gate charge (1.64 nC typical)
Very low level gate drive requirements allowing directoperation in 3V circuits (V_GS(th)1.5V).
Gate-Source Zener for ESD ruggedness(6kV Human Body Model).
Compact industry standard SC70-6 surface mountpackage.

Material Composition

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDG313N

Obsolete

SC-88-6 / SC-70-6 / SOT-363-6

419AD

260

REEL

3000

N-Channel

Single

1.5

0.95

0.75

620

450

1.64

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDG313N

N-Channel Digital FET 25V, 0.95A, 0.45Ω

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