MOSFETs | FDG311N

N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

  • This product is general usage and suitable for many different applications.
  • 1.9 A, 20 V
  • RDS(ON) = 0.115 Ω @ VGS = 4.5 V
  • RDS(ON) = 0.150 Ω @ VGS = 2.5 V
  • Low gate charge (3nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • Compact industry standard SC70-6 surface mountpackage.

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDG311N

Last Shipments

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

N-Channel

Single

20

8

1.5

1.9

0.75

150

115

-

1.64

3

270

Price N/A

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