MOSFETs | FDFS6N548

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V, 7A, 23mΩ

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Overview

The FDFS6N548 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 23mΩ at VGS = 10V, ID = 7A
  • Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 6A
  • VF < 0.45V @ 2A
  • VF < 0.28V @ 100mA
  • Schottky and MOSFET incorporated into single power surfacemount SO-8 package
  • Electrically independent Schottky and MOSFET pinout fordesign flexibility
  • Low Miller Charge

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MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDFS6N548

Last Shipments

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

N-Channel

with Schottky Diode

30

20

2.5

7

2

-

30

23

3

9

525

Price N/A

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