FDFMA3N109

Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ

Overview

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Applications

This product is general usage and suitable for many different applications.

Features

2.9 A, 30 V
R_DS(ON) = 123 mΩ @ V_GS = 4.5 V
R_DS(ON) = 140 mΩ @ V_GS = 3.0 V
R_DS(ON) = 163 mΩ @ V_GS = 2.5
V_F < 0.46 V @ 500mA
Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm
HBM ESD protection level = 1.8kV typical (Note 3)
RoHS Compliant

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDFMA3N109

Obsolete

WDFN-6

511DA

260

REEL

3000

123

N-Channel

with Schottky Diode

1.5

2.9

1.5

163

2.4

190

Price N/A

Product Number:

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MOSFETs | FDFMA3N109

Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ

Overview

Product List

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