MOSFETs | FDFMA3N109

Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ

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Overview

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

  • This product is general usage and suitable for many different applications.
  • 2.9 A, 30 V
  • RDS(ON) = 123 mΩ @ VGS = 4.5 V
  • RDS(ON) = 140 mΩ @ VGS = 3.0 V
  • RDS(ON) = 163 mΩ @ VGS = 2.5
  • VF < 0.46 V @ 500mA
  • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm
  • HBM ESD protection level = 1.8kV typical (Note 3)
  • RoHS Compliant

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Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDFMA3N109

Last Shipments

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

N

N-Channel

with Schottky Diode

30

12

1.5

2.9

1.5

-

163

123

-

2.4

190

Price N/A

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