MOSFETs | FDFMA2P853

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20V , -3.0A, 120mΩ

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Overview

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.

  • This product is general usage and suitable for many different applications.
  • -3.0 A, -20V.
  • RDS(ON) = 120 mΩ @ VGS = -4.5 V
  • RDS(ON) = 160 mΩ @ VGS = -2.5 V
  • RDS(ON) = 240 mΩ @ VGS = -1.8 V
    Schottky:
    VF < 0.46 V @ 500 mA
  • Low Profile - 0.8 mm maximun - in the new packageMicroFET 2x2 mm
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDFMA2P853

Last Shipments

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

N

P-Channel

Dual

-20

8

-1.3

-3

1.4

Q1=Q2=160

Q1=Q2=120

-

-

4

435

Price N/A

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