Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20 V, -3.5 A, 140 mΩ

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Overview

FDFM2P110 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.
This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance.

  • This product is general usage and suitable for many different applications.
  • -3.5A, -20V
  • RDS(ON) = 140 mΩ @ VGS = -4.5V
  • RDS(ON) = 200 mΩ @ VGS = -2.5V
  • Low Profile – 0.8mm maximum – in the new packageMicroFET 3x3 mm

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V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

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FDFM2P110

Last Shipments

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

P-Channel

with Schottky Diode

-20

12

-1.5

-3.5

2

200

140

-

-

3

280

Price N/A

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