MOSFETs | FDFM2N111

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20 V, 4 A, 100 mΩ

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Overview

FDFM2N111 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.
This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low onstate resistance.

  • This product is general usage and suitable for many different applications.
  • 4 A, 20 V
  • RDS(ON) = 100 mΩ @ VGS = 4.5 V
  • RDS(ON) = 150 mΩ @ VGS = 2.5 V
  • Low Profile – 0.8 mm maximum – in the new packageMicroFET 3x3 mm

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MSL Temp (°C)

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Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDFM2N111

Last Shipments

Pb

A

H

P

WDFN-6

511DT

1

260

REEL

3000

N

N-Channel

with Schottky Diode

20

12

1.5

4

1.7

150

100

-

-

2.7

273

Price N/A

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