20V N-Channel PowerTrench® MOSFET 21A, 32mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

  • This product is general usage and suitable for many different applications.
  • 21 A, 20 V
  • RDS(ON) = 32 mΩ @ VGS = 4.5 V
  • RDS(ON) = 47 mΩ @ VGS = 2.5 V
  • Low gate charge (6.5 nC typical)
  • Fast switching
  • High performance trench technology for extremelylow RDS(ON)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD6530A

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

20

-

N-Channel

Single

8

1.2

21

33

47

32

5

6.5

710

Price N/A

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