P-Channel Power Trench® MOSFET, -35V, -4.3A, 55mΩ

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Overview

This P-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVdss capability to offer superior performance benefit in the applications.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 55mΩ at VGS = 10V, ID = -4.2A
  • Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC365P

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Obsolete

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

-55

55

P-Channel

Single

20

-3

-4.3

1.6

-

80

19

6

530

Price N/A

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