FDC365P: P-Channel Power Trench® MOSFET, -35V, -4.3A, 55mΩ

Datasheet: FDC365P-D.pdf
Rev. A (366kB)
Product Overview
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Product Change Notification
This P-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVdss capability to offer superior performance benefit in the applications.
Features
 
  • Max rDS(on) = 55mΩ at VGS = 10V, ID = -4.2A
  • Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
  • RoHS compliant
Applications
  • This product is general usage and suitable for many different applications.
Product
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Compliance
Description
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Budgetary Price/Unit
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Qty.
FDC365P Last Shipments
Pb-free
Halide free
FDC365P TSOT-23-6 419BL 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : Contact Factory
ON Semiconductor   (2020-09-02 00:00) : 3,000
Case Outlines
419BL   
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