MOSFETs | FDB8030L

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 80A , 4.5mΩ

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Overview

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

  • This product is general usage and suitable for many different applications.
  • • 80A, 30 V
  • RDS(ON) = 0.0035 Ω@ VGS =10 V
  • RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
  • Critical DC electrical parameters specified atelevated temperature
  • Rugged internal source-drain diode can eliminate theneed for an external Zener diode transientsuppressor
  • High performance trench technology for extremelylow RDS(ON)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

FDB8030L

Last Shipments

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

N-Channel

Single

30

20

2

80

187

-

4.5

3.5

-

120

10500

Price N/A

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