NSS35200CF8T1G: Low VCE(sat) Transistor, PNP, 35 V, 2.0 A
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Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
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Technical Documentation & Design Resources
| Tutorials (1) | Simulation Models (4) |
| Application Notes (2) | Data Sheets (1) |
| White Papers (1) | Package Drawings (1) |
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Availability & Samples
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Specifications
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| NSS35200CF8T1G | Active |
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NSS35200CF8T1G | ChipFET-8 | 1206A-03 | 1 | 260 | Tape and Reel | 3000 | $0.1389 | ||||||||
| Market Leadtime (weeks) | : | 2 to 4 |
| ON Semiconductor (2020-09-02 00:00) | : | 9,000 |
| PandS (2020-09-14 00:00) | : | >1K |
Product
Description
Pricing ($/Unit)
Compliance
Status
Polarity
Type
VCE(sat) Max (V)
IC Cont. (A)
VCEO Min (V)
VCBO (V)
VEBO (V)
VBE(sat) (V)
VBE(on) (V)
hFE Min
hFE Max
fT Min (MHz)
PTM Max (W)
Package Type
NSS35200CF8T1G
$0.1389
Pb
A
H
P
Active
PNP
Low VCE(sat)
0.3
2
35
55
5
0.85
0.875
100
400
100
2.75
ChipFET-8
| Support |