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NSS35200CF8T1G: Low VCE(sat) Transistor, PNP, 35 V, 2.0 A

Datasheet: Low VCE(sat) Transistor, PNP, 35 V, 7.0 A, ChipFET Package
Rev. 5 (66.0kB)
Product Overview
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Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Features
 
  • Very Low Saturation
  • High Current Switching 2A DC, 7A Peak
  • High Current Gain
  • High Cut Off Frequency
  • Low Profile Package
  • Linear Gain (Beta)
  • This is a Pb-Free Device
Applications
  • DC/DC Converter
  • Complimentary Driver
  • Supply line Load Switch
  • Current Extention & Low Drop Out Regulation
  • Battery Charging, Linear & Pulsed
  • Cathode Florescent Lamp drive
  • Peripheral Driver - LEDs, Motors, Relays
Availability & Samples
Specifications
Case Outlines
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NSS35200CF8T1G Active
Pb-free
Halide free
NSS35200CF8T1G ChipFET-8 1206A-03 1 260 Tape and Reel 3000 $0.1389
Market Leadtime (weeks) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 9,000
PandS   (2020-09-14 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Polarity
Type
VCE(sat) Max (V)
IC Cont. (A)
VCEO Min (V)
VCBO (V)
VEBO (V)
VBE(sat) (V)
VBE(on) (V)
hFE Min
hFE Max
fT Min (MHz)
PTM Max (W)
Package Type
NSS35200CF8T1G  
 $0.1389 
Pb
H
 Active   
PNP
Low VCE(sat)
0.3
2
35
55
5
0.85
0.875
100
400
100
2.75
ChipFET-8
Case Outlines
1206A-03   
Packages
NSS35200CF8T1G: Low VCE(sat) Transistor, PNP, 35 V, 2.0 A
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