FQT2P25

P-Channel QFET^® MOSFET -250 V, -0.55 A, 4.0 Ω

Overview

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters.

Applications

High Efficiency Switching DC/DC Converters

Features

-0.55 A, -250 V, R_DS(on) = 4.0 Ω (Max.) @ V_GS = -10 V, I_D = -0.275 A
Low Gate Charge (Typ. 6.5 nC)
Low Crss (Typ. 6.5 pF)
100% Avalanche Tested

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQT2P25TF

Last Shipments

SOT-223-4 / TO-261-4

318H-01

250

REEL

4000

-250

4000

P-Channel

Single

-5

-0.55

2.5

6.5

190

Price N/A

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MOSFETs | FQT2P25

P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω

Overview

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P-Channel QFET^® MOSFET -250 V, -0.55 A, 4.0 Ω