FQP50N06

Power MOSFET, N-Channel, QFET^®, 60 V, 50 A, 22 mΩ, TO-220

Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

50A, 60V, R_DS(on)= 0.022Ω @V_GS = 10 V
Low gate charge ( typical 31 nC)
Low Crss ( typical 65 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQP50N06

Last Shipments

TO-220-3

340AT

TUBE

1000

N-Channel

Single

±25

120

1180

Price N/A

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MOSFETs | FQP50N06

Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, TO-220

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Power MOSFET, N-Channel, QFET^®, 60 V, 50 A, 22 mΩ, TO-220