MOSFETs | FDMD84100

Dual N-Channel PowerTrench® MOSFET 100V, 21A, 20mΩ

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Overview

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A
  • Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5.5 A
  • Ideal for flexible layout in secondary side synchronous rectification
  • Termination is Lead-free and RoHS Compliant
  • 100% UIL tested

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMD84100

Last Shipments

Pb

A

H

P

PQFN-8

483AU

1

260

REEL

3000

N

N-Channel

Dual

100

±20

4

21

23

-

-

Q1=Q2=20

-

7.3

734

Price N/A

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