FDFME3N311ZT

Integrated N-Channel PowerTrench^® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ

Overview

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on) = 299 mΩ at V_GS = 4.5 V, I_D = 1.6 A
Max r_DS(on) = 410 mΩ at V_GS = 2.5 V, I_D = 1.3 A
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600V (Note3)
RoHS Compliant

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDFME3N311ZT

Obsolete

UDFN-6

517DW

260

REEL

5000

299

N-Channel

with Schottky Diode

1.5

1.8

1.4

410

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDFME3N311ZT

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ

Overview

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Integrated N-Channel PowerTrench^® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ