MOSFETs | FDFMA2N028Z

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ

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Overview

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra–portable applications. It features a MOSFET with low on–state resistance, and an independently connected schottky diode with low forward voltage.
The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A
  • Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A
  • HBM ESD protection level > 2kV (Note 3)
    Schottky
  • VF < 0.37V @ 500mA
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  • RoHS Compliant

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MSL Type

MSL Temp (°C)

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ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDFMA2N028Z

Last Shipments

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

N

N-Channel

with Schottky Diode

20

12

1.5

3.7

1.4

86

68

-

-

4

340

Price N/A

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