MOSFETs | FDD4141_F085

P-Channel PowerTrench® MOSFET, -40V, -50A, 12.3mΩ

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Overview

This P-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.

  • Infotainment
  • Portable Navigation
  • Infotainment
  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive
  • Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
  • Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
  • High performance trench technology for extremely low rDS(on)
  • Qualified to AEC Q101
  • RoHS Compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDD4141-F085P

Last Shipments

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

P-Channel

Single

-40

±20

-3

-50

69

-

18

-

-

36

2085

Price N/A

More Details

FDD4141-F085

Lifetime

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

P-Channel

Single

-40

±20

-3

-50

69

-

18

12.3

-

36

2085

$0.6869

More Details

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