Power MOSFET, N-Channel, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220

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Overview

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

  • Typ. RDS(on) = 340 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 43 nC)
  • Low Eoss (Typ. 4.1 uJ @ 400 V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability

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V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

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FCPF400N80ZL1

Last Shipments

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

N-Channel

Single

800

DC: ±20, AC: ±30

4.5

11

35.7

-

-

400

-

43

1770

Price N/A

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