MOSFETs | FCPF190N60_F152

N-Channel SuperFET® II MOSFET 600V, 20.2A, 199mΩ

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SuperFET® II MOSFET is ON Semiconductor Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

  • 650 V @TJ = 150°C
  • Max. RDS(on) = 199 mΩ
  • Ultra low gate charge (typ. Qg = 57 nC)
  • Low effective output capacitance (typ. Coss.eff = 160 pF)
  • 100% avalanche tested

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