Dual N-Channel Power MOSFET 30V, 7A, 24mΩ

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Overview

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

  • LiB Protection Switch
  • Motor Drive
  • DSC, Fan Motor
  • RoHS compliance
  • Low On-Resistance
  • ESD Diode-Protected Gate
  • 4.0V drive
  • Composite type, Facilitating high-density mounting

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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ECH8659-TL-W

Last Shipments

Pb

A

H

P

SOT-28 FL / ECH-8

1

260

REEL

3000

N

N-Channel

Dual

30

20

2.6

7

1.3

-

Q1=Q2=41

Q1=Q2=24

-

11.8

710

Price N/A

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