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NTLJS3113P: Single P-Channel Power MOSFET -20V -7.7A 40 mΩ

Datasheet: MOSFET — Power, Single, P-Channel, WDFN, 2X2 mm -20 V, -7.7 A
Rev. 6 (145kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Power MOSFET -20 V, -9.5 A, µCool™ Single P-Channel 2x2 mm WDFN Package
Features
 
  • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction
  • 2x2 mm Footprint Same as SC-88 Package
  • Lowest RDS(on) Solution in 2x2 mm Package
  • 1.5 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
  • RoHS Compliant
Applications   End Products
  • DC-DC Converters (Buck and Boost Circuits)
  • Optimized for Battery and Load Management Applications in Portable Equipment
  • High Side Load Switch
 
  • Cell Phones
  • PDAs
  • Media Players
Availability & Samples
Specifications
Case Outlines
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTLJS3113PT1G Active
Pb-free
Halide free
NTLJS3113P WDFN-6 506AP 1 260 Tape and Reel 3000 $0.1708
NTLJS3113PTAG Obsolete 
Pb-free
Halide free
NTLJS3113P WDFN-6 506AP 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 39,000
PandS   (2020-09-14 00:00) : >1K
Market Leadtime (weeks) : Contact Factory
PandS   (2020-09-14 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTLJS3113PT1G  
 $0.1708 
Pb
H
 Active   
P-Channel
Single
-20
8
1
5.8
1.9
50
40
-
2.6
13
1329
WDFN-6
Case Outlines
506AP   
Packages
NTLJS3113P: Single P-Channel Power MOSFET -20V -7.7A 40 mΩ
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