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NTLJF3117P: Single P-Channel µCool™ Power MOSFET with Schottky Diode -20V -4.1A 100mΩ

Datasheet: MOSFET — Power, P-Channel, Schottky Diode, Schottky Barrier Diode, μCool 2x2 mm -20 V, -4.1 A, 2.0
Rev. 2 (143kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
Power MOSFET and Schottky Diode -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, µCool™ Package
Features
 
  • FETKY™ Configuration with MOSFET plus Low Vf Schottky Diode
  • µCool™ Package Provides Exposed Drain Pad for Excellent Thermal Conduction
  • 2x2 mm Footprint Same as SC-88 Package Design
  • Indepedent Pinout Provides Circuit Design Flexibility
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
  • High Current Schottky Diode: 2 A Current Rating
  • This is a Pb-Free Device
Applications   End Products
  • Optimized for Portable Applications
  • DC-DC Buck Circuit
  • Li-Ion Battery Applications
  • Color Display and Camera Flash Regulators
 
  • Cell Phones
  • Digital Cameras
  • Media Players
Availability & Samples
Specifications
Case Outlines
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTLJF3117PT1G Active
Pb-free
Halide free
NTLJF3117P WDFN-6 506AN 1 260 Tape and Reel 3000 $0.1201
NTLJF3117PTAG Obsolete 
Pb-free
Halide free
NTLJF3117P WDFN-6 506AN 1 260 Tape and Reel 3000  
Market Leadtime (weeks) : 17 to 20
PandS   (2020-09-14 00:00) : >1K
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTLJF3117PT1G  
 $0.1201 
Pb
H
 Active   
P-Channel
with Schottky Diode
-20
8
1
3.3
1.5
135
100
-
12.8
5.5
531
WDFN-6
Case Outlines
506AN   
Packages
NTLJF3117P: Single P-Channel µCool™ Power MOSFET with Schottky Diode -20V -4.1A 100mΩ
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