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FDN335N: N-Channel 2.5V Specified PowerTrench™ MOSFET 20V, 1.7A, 70mΩ

Datasheet: N-Channel 2.5V Specified PowerTrenchTM MOSFET
Rev. 3 (198kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
 
  • 1.7 A, 20 V
  • RDS(on) = 0.07 Ω @ VGS = 4.5 V
  • RDS(on) = 0.100 Ω @ VGS = 2.5 V
  • Low gate charge (3.5nC typical).
  • High performance trench technology for extremely lowRDS(ON).
  • High power and current handling capability.
Applications
  • This product is general usage and suitable for many different applications.
  • DC/DC converter
  • Load Switch
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDN335N Active
Pb-free
Halide free
FDN335N SOT-23-3 527AG 1 260 Tape and Reel 3000 $0.12
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDN335N  
 $0.12 
Pb
H
 Active   
N-Channel
Single
20
8
1.5
1.7
0.5
100
70
-
7
3.5
310
SOT-23-3
Case Outlines
527AG   
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