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FDD10N20LZ: Power MOSFET, N-Channel, Logic Level, UniFETTM, 200 V, 7.6 A, 360 mΩ, DPAK

Datasheet: FDD10N20LZ-D.pdf
Rev. A (720kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
UniFETTM MOSFET is an high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
 
  • RDS(on) = 300mΩ ( Typ.)@ VGS = 10V, ID = 3.8A
  • Low gate charge ( Typ. 12nC)
  • Low Crss ( Typ. 11pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD improved capability
  • RoHS compliant
Applications
  • This product is general usage and suitable for many different applications.
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
LIGHTING-1-GEVK Active
Pb-free
Connected Lighting Platform for LED Control
FutureElectronics (2020-08-19) : 4
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDD10N20LZTM Active
Pb-free
Halide free
FDD10N20LZ DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $0.3185
Market Leadtime (weeks) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 67,500

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDD10N20LZTM  
 $0.3185 
Pb
H
 Active   
N-Channel
Single
200
±20
3
7.6
83
-
400
360
-
12
440
DPAK-3 / TO-252-3
Case Outlines
369AS   
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