FDD10N20LZ: Power MOSFET, N-Channel, Logic Level, UniFETTM, 200 V, 7.6 A, 360 mΩ, DPAK
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UniFETTM MOSFET is an high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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Technical Documentation & Design Resources
| Software (8) | Package Drawings (1) |
| Application Notes (12) | Videos (2) |
| Simulation Models (2) | Evaluation Board Documents (5) |
| Data Sheets (1) |
Evaluation/Development Tool Information
| Product | Status | Compliance | Short Description | Action | |
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| LIGHTING-1-GEVK | Active |
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Connected Lighting Platform for LED Control |
| FutureElectronics (2020-08-19) | : | 4 |
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Availability & Samples
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Specifications
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Interactive Block Diagram
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Case Outline |
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| FDD10N20LZTM | Active |
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FDD10N20LZ | DPAK-3 / TO-252-3 | 369AS | 1 | 260 | Tape and Reel | 2500 | $0.3185 | ||||||||
| Market Leadtime (weeks) | : | 13 to 16 |
| ON Semiconductor (2020-09-02 00:00) | : | 30,000 |
Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDD10N20LZTM
$0.3185
Pb
A
H
P
Active
N-Channel
Single
200
±20
3
7.6
83
-
400
360
-
12
440
DPAK-3 / TO-252-3
Case Outlines
369AS
Application
Diagram - Block
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