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FDB1D7N10CL7: Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ

Datasheet: N-Channel Shielded Gate PowerTrench MOSFET
Rev. 2 (183kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features   Benefits
     
  • Low Qrr
 
  • Miniuze switching loss
  • Soft recovery body diode
 
  • Reduced EMI and voltage spike
  • Low RDS(on)
 
  • Minimize conduction loss
  • Small Footprint (5 x 6 mm)
 
  • Compact design
  • RoHS compliant
   
Applications   End Products
  • Motor Control
  • DC-DC Converters
  • Battery Management
  • Solar Inverters
 
  • Fork Lifts, Multi Rotor Drones, Power Tools
  • Power Supplies
  • Battery Packs and Chargers
  • Power Optimizers
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDB1D7N10CL7 Active
Pb-free
Halide free
FDB1D7N10CL7, 100V PTNG NMOS D2PAK-7 / TO-263-7 418AY 1 245 Tape and Reel 800 $3.7388
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDB1D7N10CL7  
 $3.7388 
Pb
H
 Active   
N-Channel
Single
100
±20
4
268
250
-
-
1.75
-
116
8285
D2PAK-7 / TO-263-7
Case Outlines
418AY   
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