FDMS8020

N-Channel PowerTrench^® MOSFET 30V, 131A, 2.5mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(on), fast switching speed, and body diode reverse-recovery performance.

Applications

Consumer

Features

Max r_DS(on) = 2.5 mΩ at V_GS = 10V, I_D = 26 A
Max r_DS(on) = 3.6 mΩ at V_GS = 4.5V, I_D = 21.5 A
Advanced Package and Silicon combination for low r_DS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant

Material Composition

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MSL Type

MSL Temp (°C)

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Container Qty.

Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FDMS8020

Lifetime

PQFN-8

483AE

260

REEL

3000

N-Channel

Single

131

3.6

2.5

2855

$0.4599

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MOSFETs | FDMS8020

N-Channel PowerTrench® MOSFET 30V, 131A, 2.5mΩ

Overview

Availability & Samples (size)

Email Sales

N-Channel PowerTrench^® MOSFET 30V, 131A, 2.5mΩ