MOSFETs | FDMB2308PZ

Dual Common Drain P-Channel PowerTrench® MOSFET -20V, -7A, 36mΩ

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Overview

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on ON Semiconductor’s advanced PowerTrench® process with state of the art MircoFET Leadframe, the FDMB2308PZ minimizes both PCB space and rS1S2(on).

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  • Max rS1S2(on) = 36 mΩ at VGS = -4.5 V, ID = -5.7 A
  • Max rS1S2(on) = 50 mΩ at VGS = -2.5 V, ID = -4.6 A
  • Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm
  • HBM ESD protection level 2.8 kV (Note 3)
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDMB2308PZ

Active

Pb

A

H

P

WDFN-6

511CX

1

260

REEL

3000

Y

P-Channel

Dual

-20

12

-1.5

-7

2.2

Q1=Q2=50

Q1=Q2=36

-

7

22

2280

$0.7786

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