Single P-Channel PowerTrench® MOSFET -20V, -2.5A, 13mΩ

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Overview

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 13 mΩ at VGS = -4.5 V, ID = -2.5 A
  • Max rDS(on) = 16 mΩ at VGS = -2.5 V, ID = -1.4 A
  • Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -1.0 A
  • Max rDS(on) = 30 mΩ at VGS = -1.5 V, ID = -0.85 A
  • Low Profile - 0.8 mm maximum in the new package MicroFET2x2 mm
  • HBM ESD protection level > 1K V typical (Note 3)
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMA008P20LZ

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Obsolete

CAD Model

Pb

A

H

P

PQFN-6

1

260

REEL

3000

N

-20

-

P-Channel

Single

8

-1.4

-2.5

2.4

16

13

10

28.5

3131

Price N/A

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