MOSFETs | FDG6316P

P-Channel 1.8V Specified PowerTrench® MOSFET -12V, -0.7 A, 270 mΩ

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Overview

This P-channel 1.8V specified MOSFET uses an advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.

  • This product is general usage and suitable for many different applications.
  • -0.7 A, -12 V
  • RDS(ON) = 270 mΩ @ VGS = -4.5 V
  • RDS(ON) = 360 mΩ @ VGS = -2.5 V
  • RDS(ON) = 650 mΩ @ VGS = -1.8 V
  • Low Gate Charge
  • High-Performance Trench Technology for Extremelylow RDS(ON)
  • Compact industry standard SC70-6 surface mountpackage

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Product

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDG6316P

Active

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Y

P-Channel

Dual

-12

8

-1.5

-0.7

0.3

Q1=Q2=360

Q1=Q2=270

-

0.86

1.7

146

$0.1236

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