MOSFETs | FDG410NZ

N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low rDS(on) and gate charge (Qg) in a small package.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A
  • Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A
  • Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A
  • Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A
  • HBM ESD protection level > 2 kV (Note 3)
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • Fast switching speed
  • Low gate charge
  • RoHS compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDG410NZ

Last Shipments

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419AD

1

260

REEL

3000

N

N-Channel

Single

20

8

1

2.2

0.42

77

70

-

0.29

5.1

400

Price N/A

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