MOSFETs | FDG315N

N-Channel Logic Level PowerTrench® MOSFET 30 V, 2 A, 120 mΩ

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Overview

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • This product is general usage and suitable for many different applications.
  • 2 A, 30 A V
  • RDS(on) = 0.12 Ω @ VGS = 10 V
  • RDS(on) = 0.16 Ω @ VGS = 4.5 V
  • Low gate charge (2.1nC typical).
  • High performance trench technology for extremely lowRDS(ON) .
  • Compact industry standard SC70-6 surface mountpackage.

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Pricing ($/Unit)

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FDG315N

Last Shipments

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

N-Channel

Single

30

20

3

2

0.75

-

160

120

4.5

2.1

220

Price N/A

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