Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 65 A, 40 mΩ, TO-247AD

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Overview

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
  • 700 V @ TJ = 150°C
  • Ultra Low Gate Charge (Typ. Qg = 136 nC)
  • Optimized Capacitance
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 1154 pF)
  • Typ. RDS(on) = 35.4 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

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MSL Temp (°C)

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Channel Polarity

Configuration

V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

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FCHD040N65S3-F155

Active, Not Rec

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

N-Channel

Single

650

30

4.5

65

417

-

-

40

-

136

-

$6.6266

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