FQP30N06L: Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, TO-220

Datasheet: FQP30N06L-D.pdf
Rev. A (794kB)
Product Overview
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Product Change Notification
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
Features
 
  • 32A, 60V, RDS(on) = 35mΩ(Max.) @VGS = 10 V, ID = 16A
  • Low gate charge ( Typ. 15nC)
  • Low Crss ( Typ. 50pF)
  • 100% avalanche tested
  • 175°C maximum junction temperature rating
Applications
  • Other Audio & Video
Technical Documentation & Design Resources
Application Notes (12) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FQP30N06L Active
Pb-free
Halide free
FQP30N06L TO-220-3 340AT NA Tube 1000 $0.8096
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FQP30N06L  
 $0.8096 
Pb
H
 Active   
N-Channel
Single
60
±20
2.5
32
79
-
45
35
-
15
800
TO-220-3
Case Outlines
340AT   
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