FQP30N06L

Power MOSFET, N-Channel, Logic Level, QFET^®, 60 V, 32 A, 35 mΩ, TO-220

Overview

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..

Applications

Other Audio & Video

Features

32A, 60V, R_DS(on) = 35mΩ(Max.) @V_GS = 10 V, I_D = 16A
Low gate charge ( Typ. 15nC)
Low C_rss ( Typ. 50pF)
100% avalanche tested
175°C maximum junction temperature rating

Material Composition

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Channel Polarity

Configuration

V_(BR)DSS Min (V)

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Pricing ($/Unit)

FQP30N06L

Last Shipments

TO-220-3

340AT

TUBE

1000

N-Channel

Single

±20

2.5

800

Price N/A

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MOSFETs | FQP30N06L

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, TO-220

Overview

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Power MOSFET, N-Channel, Logic Level, QFET^®, 60 V, 32 A, 35 mΩ, TO-220