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NXH006P120MNF2: SiC Modules, Half Bridge 2-PACK 1200 V, 6 mohm SiC MOSFET, F2 Package

Datasheet: F2HALFBR Module
Rev. P3 (1534kB)
Product Overview
»View Material Composition
» Product Change Notification
The NXH006P120MNF2 is a half-bridge or 2-PACK SiC Module with 2 6mohm 1200V SiC MOSFET switches and a thermistor in an F2 package. The SiC MOSFET switches use M1 technology and are driven with 18V-20V gate drive.
Features   Benefits
     
  • Robust M1 planar SiC MOSFET technology
 
  • Improved reliability from planar technology and from lower die thermal resistance
  • 18V to 20V gate drive
 
  • 20V operation for lower losses; 18V for compatibility with other modules
Applications   End Products
  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion
 
  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters
Technical Documentation & Design Resources
Application Notes (2) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NXH006P120MNF2PTG Active 
Pb-free
Halide free
NXH006P120MNF2 PIM36 56.7x42.5 (PRESS FIT) 180BY NA BTRAY 20 $213.328
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Configuration
VBR Max (V)
RDS(on) Typ (Ω)
Package Type
NXH006P120MNF2PTG  
 $213.328 
Pb
H
 Active   
2-PACK
1200
6
PIM36 56.7x42.5 (PRESS FIT)
Case Outlines
180BY   
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