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FDN327N: N-Channel 1.8 Vgs Specified PowerTrench® MOSFET 20V, 2A, 70mΩ

Datasheet: N-Channel 1.8 Vgs Specified PowerTrenchÒ MOSFET
Rev. 3 (160kB)
Product Overview
»View Reliability Data
»View Material Composition
» Product Change Notification
This 20V N-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications.
Features
 
  • 2 A, 20 V
  • RDS(ON) = 70 mΩ @ VGS = 4.5 V
  • RDS(ON) = 80 mΩ @ VGS = 2.5 V
  • RDS(ON) = 120 mΩ @ VGS = 1.8 V
  • Low gate charge
  • Fast switching speed
  • High performance trench technology for extremely low RDS(on)
Applications
  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Battery Protection
  • Power Management
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FDN327N Active
Pb-free
Halide free
FDN327N SOT-23-3 527AG 1 260 Tape and Reel 3000 $0.1635
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FDN327N  
 $0.1635 
Pb
H
 Active   
N-Channel
Single
20
8
1.5
2
0.5
80
70
-
3.6
4.5
423
SOT-23-3
Case Outlines
527AG   
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