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NCV57001: IGBT Gate Driver, Isolated High Current and High Efficiency, with Internal Galvanic Isolation

Datasheet: Isolated High Current IGBT Gate Driver
Rev. 0 (149kB)
Product Overview
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NCV57001 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn-off at DESAT. NCV57001 accommodates both 5V and 3.3V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCV57001 provides > 5 kVrms (UL1577 rating) galvanic isolation and > 1200 Viorm (working voltage) capabilities. NCV57001 is available in the wide-body SOIC-16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements.
Features   Benefits
     
  • High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages
 
  • Improves system efficiency
  • Short Propagation Delays with Accurate Matching
 
  • Improves PWM signal integrity
  • DESAT with Soft Turn Off
 
  • Protection against overload and short circuits
  • Active Miller Clamp and Negative Gate Voltage
 
  • Prevents spurious gate turn-on
  • High Transient & Electromagnetic Immunity
 
  • Ruggedness in fast slew rate high voltage and high current switching applications
  • 5 kV Galvanic Isolation
 
  • Galvanic isolation to separate high voltage and low voltage sides to provide safety and protection
Applications   End Products
  • Automotive Power Supplies
  • HEV/EV Traction Inverters
  • OBC
  • BSG Inverters
  • PTC Heaters
  • EV Chargers
 
  • Automobiles
  • xEV/EV Automobiles
Technical Documentation & Design Resources
Application Notes (1) Package Drawings (1)
Data Sheets (1) Videos (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NCV57001DWR2G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NCV57001 SOIC-16W 751G-03 1 260 Tape and Reel 1000 Contact Sales Office
Market Leadtime (weeks) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 338,000
Avnet   (2020-08-19 00:00) : >1K
FutureElectronics   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Drive Source/Sink Typ (mA)
Rise Time (ns)
Fall Time (ns)
tp Max (ns)
Package Type
NCV57001DWR2G  
Pb
A
H
P
 Active   
IGBT
SiC MOSFET
1
Single
Galvanic Isolation
5.5
24
6000 / 6000
10
15
90
SOIC-16W
Case Outlines
751G-03   
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