NCP51820: High Performance, 650 V Half Bridge Gate Driver for GaN Power Switches
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The NCP51820 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51820 offers short and matched propagation delays as well as −3.5 V to +650 V (typical) common mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51820 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.
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Technical Documentation & Design Resources
| Tutorials (1) | Data Sheets (1) |
| Application Notes (1) | Package Drawings (1) |
| White Papers (1) | Videos (1) |
| Simulation Models (1) | Evaluation Board Documents (6) |
Evaluation/Development Tool Information
| Product | Status | Compliance | Short Description | Action | |
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| NCP51820GAN1GEVB | Active |
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NCP51820 GaN driver evaluation board for 650 V, 50 mOhm E-mode GaN HEMT |
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Availability & Samples
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Specifications
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Case Outline |
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| NCP51820AMNTWG | Active |
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NCP51820, 650 V Half Bridge Gate Driver for GaN Power Switches | QFN-15 | 485FN | 1 | 260 | Tape and Reel | 4000 | $1.1464 | ||||||||
| Market Leadtime (weeks) | : | Contact Factory |
Product
Description
Pricing ($/Unit)
Compliance
Status
Power Switch
Number of Outputs
Topology
Isolation Type
Vin Max (V)
VCC Max (V)
Rise Time (ns)
Fall Time (ns)
Drive Source Current Typ (A)
Drive Sink Current Typ (A)
Turn On Prop. Delay Typ (ns)
Turn Off Prop. Delay Typ (ns)
Delay Matching
Package Type
NCP51820AMNTWG
$1.1464
Pb
A
H
P
Active
GaN
2
Half-Bridge
Junction Isolation
650
20
2
1.5
1
2
25
25
5
QFN-15
Case Outlines
485FN
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